SM8S36-7001HE4/2N

SM8S36-7001HE4/2N Vishay General Semiconductor - Diodes Division


SM8S10_thru_SM8S43A._Aug.31,2016.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 64.3VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 64.3V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
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Technische Details SM8S36-7001HE4/2N Vishay General Semiconductor - Diodes Division

Description: TVS DIODE 36VWM 64.3VC DO218AB, Packaging: Tape & Reel (TR), Package / Case: DO-218AB, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Current - Peak Pulse (10/1000µs): 103A, Voltage - Reverse Standoff (Typ): 36V, Supplier Device Package: DO-218AB, Unidirectional Channels: 1, Voltage - Breakdown (Min): 40V, Voltage - Clamping (Max) @ Ipp: 64.3V, Power - Peak Pulse: 6600W (6.6kW), Power Line Protection: No, Part Status: Obsolete, Grade: Automotive, Qualification: AEC-Q101.