SMBJ3V3HE3/5B Vishay Semiconductors
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Technische Details SMBJ3V3HE3/5B Vishay Semiconductors
Description: TVS DIODE 3.3VWM 10.3VC DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 175°C (TJ), Capacitance @ Frequency: 5200pF @ 1MHz, Current - Peak Pulse (10/1000µs): 200A (8/20µs), Voltage - Reverse Standoff (Typ): 3.3V, Supplier Device Package: DO-214AA (SMBJ), Unidirectional Channels: 1, Voltage - Breakdown (Min): 4.1V, Voltage - Clamping (Max) @ Ipp: 10.3V, Power - Peak Pulse: 600W, Power Line Protection: No, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SMBJ3V3HE3/5B
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SMBJ3V3HE3/5B | Hersteller : Vishay |
 TVS Diode Single Uni-Dir 3.3V 600W Automotive 2-Pin SMB T/R |
Produkt ist nicht verfügbar |
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SMBJ3V3HE3/5B | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 3.3VWM 10.3VC DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Capacitance @ Frequency: 5200pF @ 1MHz Current - Peak Pulse (10/1000µs): 200A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V Supplier Device Package: DO-214AA (SMBJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 4.1V Voltage - Clamping (Max) @ Ipp: 10.3V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |