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SMMB911DK-T1-GE3 Vishay Siliconix


SMMB911DK-T1-GE3.pdf Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.6A SC75-6L
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-75-6L Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
Rds On (Max) @ Id, Vgs: 295mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6L Dual
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Technische Details SMMB911DK-T1-GE3 Vishay Siliconix

Description: MOSFET 2P-CH 20V 2.6A SC75-6L, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-75-6L Dual, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.6A, Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V, Rds On (Max) @ Id, Vgs: 295mOhm @ 1.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® SC-75-6L Dual.