Produkte > ONSEMI > SMUN5213T1G
SMUN5213T1G

SMUN5213T1G onsemi


dtc144e-d.pdf Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 27000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.15 EUR
6000+ 0.13 EUR
15000+ 0.11 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details SMUN5213T1G onsemi

Description: TRANS PREBIAS NPN 50V SC70-3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Supplier Device Package: SC-70-3 (SOT323), Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 202 mW, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 47 kOhms.

Weitere Produktangebote SMUN5213T1G nach Preis ab 0.11 EUR bis 0.88 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SMUN5213T1G SMUN5213T1G Hersteller : onsemi dtc144e-d.pdf Description: TRANS PREBIAS NPN 50V SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 28014 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
30+0.88 EUR
36+ 0.72 EUR
100+ 0.38 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 30
SMUN5213T1G Hersteller : onsemi DTC144E_D-2310824.pdf Bipolar Transistors - Pre-Biased SS BR XSTR SPCL TR
auf Bestellung 38520 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
71+0.73 EUR
87+ 0.6 EUR
154+ 0.34 EUR
500+ 0.24 EUR
1000+ 0.16 EUR
3000+ 0.11 EUR
Mindestbestellmenge: 71
SMUN5213T1G dtc144e-d.pdf
auf Bestellung 111000 Stücke:
Lieferzeit 21-28 Tag (e)
SMUN5213T1G SMUN5213T1G Hersteller : ONSEMI dtc144e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.31W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
SMUN5213T1G SMUN5213T1G Hersteller : ONSEMI dtc144e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.31W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar