SQ1431EH-T1-GE3

SQ1431EH-T1-GE3

Hersteller:
SQ1431EH-T1-GE3 MOSFET P-CH 30V 3A SC70
sq1431eh.pdf
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Technische Details SQ1431EH-T1-GE3

Description: MOSFET P-CH 30V 3A SC70-6, Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V, Vgs(th) (Max) @ Id: 2V @ 250µA, Rds On (Max) @ Id, Vgs: 175mOhm @ 2A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Manufacturer: Vishay Siliconix, Base Part Number: SQ1431, Package / Case: 6-TSSOP, SC-88, SOT-363, Supplier Device Package: SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 3W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 25V, Vgs (Max): ±20V.

Preis SQ1431EH-T1-GE3 ab 0 EUR bis 0 EUR

SQ1431EH-T1_GE3
Hersteller: Vishay / Siliconix
MOSFET 30V 3A 3W AEC-Q101 Qualified
sq1431eh-102450.pdf
auf Bestellung 5909 Stücke
Lieferzeit 14-28 Tag (e)
SQ1431EH-T1_GE3
SQ1431EH-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3A SC70-6
Rds On (Max) @ Id, Vgs: 175mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQ1431
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
sq1431eh.pdf
auf Bestellung 5300 Stücke
Lieferzeit 21-28 Tag (e)
SQ1431EH-T1_GE3
SQ1431EH-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 175mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQ1431
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 25V
Vgs (Max): ±20V
sq1431eh.pdf
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SQ1431EH-T1-GE3
SQ1431EH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3A SC70
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3W
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 175 mOhm @ 2A, 10V
sq1431eh.pdf
auf Bestellung 906 Stücke
Lieferzeit 21-28 Tag (e)
SQ1431EH-T1-GE3
SQ1431EH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3A SC70
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 3W
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 175 mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
sq1431eh.pdf
auf Bestellung 906 Stücke
Lieferzeit 21-28 Tag (e)
SQ1431EH-T1-GE3
SQ1431EH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3A SC70
Rds On (Max) @ Id, Vgs: 175 mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3W
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
sq1431eh.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen