SQ1431EH-T1-GE3
SQ1431EH-T1-GE3
Hersteller:SQ1431EH-T1-GE3 MOSFET P-CH 30V 3A SC70
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Technische Details SQ1431EH-T1-GE3
Description: MOSFET P-CH 30V 3A SC70-6, Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V, Vgs(th) (Max) @ Id: 2V @ 250µA, Rds On (Max) @ Id, Vgs: 175mOhm @ 2A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Manufacturer: Vishay Siliconix, Base Part Number: SQ1431, Package / Case: 6-TSSOP, SC-88, SOT-363, Supplier Device Package: SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 3W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 25V, Vgs (Max): ±20V.
Preis SQ1431EH-T1-GE3 ab 0 EUR bis 0 EUR
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SQ1431EH-T1_GE3 Hersteller: Vishay / Siliconix MOSFET 30V 3A 3W AEC-Q101 Qualified
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auf Bestellung 5909 Stücke  Lieferzeit 14-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET P-CH 30V 3A SC70-6 Rds On (Max) @ Id, Vgs: 175mOhm @ 2A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Base Part Number: SQ1431 Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 3W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA
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auf Bestellung 5300 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET P-CH 30V 3A SC70-6 Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 175mOhm @ 2A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Base Part Number: SQ1431 Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 3W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 25V Vgs (Max): ±20V
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auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET P-CH 30V 3A SC70 Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 3W Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 175 mOhm @ 2A, 10V
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auf Bestellung 906 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET P-CH 30V 3A SC70 Drain to Source Voltage (Vdss): 30V Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) FET Type: MOSFET P-Channel, Metal Oxide Power - Max: 3W Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 175 mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
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auf Bestellung 906 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET P-CH 30V 3A SC70 Rds On (Max) @ Id, Vgs: 175 mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 3W Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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