SQ1470AEH-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 30V 1.7A SOT363 SC70
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SC-70-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 270000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.47 EUR |
| 6000+ | 0.44 EUR |
| 9000+ | 0.41 EUR |
| 30000+ | 0.4 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQ1470AEH-T1_GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 1.7A SOT363 SC70, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 4.2A, 4.5V, Power Dissipation (Max): 3.3W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: SC-70-6, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote SQ1470AEH-T1_GE3 nach Preis ab 0.26 EUR bis 1.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SQ1470AEH-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 1.7A SOT363 SC70 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4.2A, 4.5V Power Dissipation (Max): 3.3W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SC-70-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 270848 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
SQ1470AEH-T1_GE3 | Hersteller : Vishay Semiconductors |
MOSFET 30V Vds +/-12V Vgs AEC-Q101 Qualified |
auf Bestellung 279799 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
| SQ1470AEH-T1_GE3 | Hersteller : VISHAY |
SQ1470AEH-T1-GE3 SMD N channel transistors |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
|