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SQ1912EH-T1_GE3

SQ1912EH-T1_GE3 Vishay Siliconix

sq1912eh.pdf Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.8A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.31 EUR
6000+ 0.3 EUR
9000+ 0.27 EUR
Mindestbestellmenge: 3000
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Technische Details SQ1912EH-T1_GE3 Vishay Siliconix

Description: MOSFET 2N-CH 20V 0.8A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SC-70-6, Part Status: Active.

Weitere Produktangebote SQ1912EH-T1_GE3 nach Preis ab 0.26 EUR bis 1.14 EUR

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SQ1912EH-T1_GE3 SQ1912EH-T1_GE3 Hersteller : Vishay / Siliconix sq1912eh.pdf MOSFET 20V Vds 0.8A Id AEC-Q101 Qualified
auf Bestellung 197938 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
47+1.11 EUR
60+ 0.87 EUR
108+ 0.48 EUR
1000+ 0.33 EUR
3000+ 0.29 EUR
9000+ 0.26 EUR
Mindestbestellmenge: 47
SQ1912EH-T1_GE3 SQ1912EH-T1_GE3 Hersteller : Vishay Siliconix sq1912eh.pdf Description: MOSFET 2N-CH 20V 0.8A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
auf Bestellung 22922 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
23+1.14 EUR
30+ 0.89 EUR
100+ 0.53 EUR
500+ 0.49 EUR
1000+ 0.34 EUR
Mindestbestellmenge: 23
SQ1912EH-T1_GE3 SQ1912EH-T1_GE3 Hersteller : Vishay sq1912eh.pdf Trans MOSFET N-CH 20V 0.8A Automotive 6-Pin SC-70 T/R
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