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SQ1922AEEH-T1_GE3

SQ1922AEEH-T1_GE3 Vishay Siliconix


sq1922aeeh.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH DUAL 20V .85A SOT-36
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
auf Bestellung 24000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.4 EUR
Mindestbestellmenge: 3000
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Technische Details SQ1922AEEH-T1_GE3 Vishay Siliconix

Description: MOSFET N-CH DUAL 20V .85A SOT-36, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W (Tc), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 850mA (Tc), Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V, Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SC-70-6, Part Status: Active.

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SQ1922AEEH-T1_GE3 SQ1922AEEH-T1_GE3 Hersteller : Vishay / Siliconix sq1922aeeh.pdf MOSFET Dual Nch 20V Vds SOT-363
auf Bestellung 158305 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
49+1.06 EUR
58+ 0.9 EUR
100+ 0.64 EUR
500+ 0.5 EUR
1000+ 0.4 EUR
3000+ 0.34 EUR
9000+ 0.32 EUR
Mindestbestellmenge: 49
SQ1922AEEH-T1_GE3 SQ1922AEEH-T1_GE3 Hersteller : Vishay Siliconix sq1922aeeh.pdf Description: MOSFET N-CH DUAL 20V .85A SOT-36
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
auf Bestellung 27676 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.12 EUR
28+ 0.96 EUR
100+ 0.72 EUR
500+ 0.56 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 24