SQ1922EEH-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 20V SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 840mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.42 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQ1922EEH-T1_GE3 Vishay Siliconix
Description: MOSFET 2N-CH 20V SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 840mA (Tc), Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, Rds On (Max) @ Id, Vgs: 350mOhm @ 400mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SC-70-6, Part Status: Active.
Weitere Produktangebote SQ1922EEH-T1_GE3 nach Preis ab 0.43 EUR bis 1.2 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SQ1922EEH-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 20V SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 840mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Rds On (Max) @ Id, Vgs: 350mOhm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-70-6 Part Status: Active |
auf Bestellung 3040 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
SQ1922EEH-T1_GE3 | Hersteller : Vishay / Siliconix |
MOSFET 20V Vds Dual N-Ch AEC-Q101 Qualified |
auf Bestellung 115097 Stücke: Lieferzeit 14-28 Tag (e) |
|