SQ2318AES-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 40V 8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 7.9A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.47 EUR |
| 6000+ | 0.44 EUR |
| 9000+ | 0.41 EUR |
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Technische Details SQ2318AES-T1_GE3 Vishay Siliconix
Description: MOSFET N-CH 40V 8A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 31mOhm @ 7.9A, 10V, Power Dissipation (Max): 3W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote SQ2318AES-T1_GE3 nach Preis ab 0.28 EUR bis 1.4 EUR
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SQ2318AES-T1_GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 4.6A; 1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 4.6A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 8.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1179 Stücke: Lieferzeit 7-14 Tag (e) |
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SQ2318AES-T1_GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 4.6A; 1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 4.6A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 8.7nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1179 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2318AES-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 7.9A, 10V Power Dissipation (Max): 3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 29236 Stücke: Lieferzeit 21-28 Tag (e) |
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SQ2318AES-T1_GE3 | Hersteller : Vishay / Siliconix |
MOSFET N-Channel 40V AEC-Q101 Qualified |
auf Bestellung 163800 Stücke: Lieferzeit 14-28 Tag (e) |
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SQ2318AES-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQ2318AES-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 8 A, 0.125 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 3.3W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.125ohm SVHC: No SVHC (10-Jun-2022) |
auf Bestellung 315813 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2318AES-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQ2318AES-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 8 A, 0.125 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 3.3W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.125ohm SVHC: No SVHC (10-Jun-2022) |
auf Bestellung 315813 Stücke: Lieferzeit 14-21 Tag (e) |