SQ2351ES-T1_GE3 VISHAY
Hersteller: VISHAYCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Power dissipation: 2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2933 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 80+ | 0.9 EUR |
| 172+ | 0.42 EUR |
| 191+ | 0.37 EUR |
| 249+ | 0.29 EUR |
| 264+ | 0.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQ2351ES-T1_GE3 VISHAY
Description: MOSFET P-CH 20V 3.2A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc), Rds On (Max) @ Id, Vgs: 115mOhm @ 2.4A, 4.5V, Power Dissipation (Max): 2W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V.
Weitere Produktangebote SQ2351ES-T1_GE3 nach Preis ab 0.27 EUR bis 1.46 EUR
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SQ2351ES-T1_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 2W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Power dissipation: 2W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.115Ω Mounting: SMD Gate charge: 5.5nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2933 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2351ES-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 3.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 2.4A, 4.5V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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SQ2351ES-T1_GE3 | Hersteller : Vishay Semiconductors |
MOSFET P-Channel 20V AEC-Q101 Qualified |
auf Bestellung 103148 Stücke: Lieferzeit 14-28 Tag (e) |
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SQ2351ES-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 3.2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 2.4A, 4.5V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V |
auf Bestellung 8829 Stücke: Lieferzeit 21-28 Tag (e) |
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SQ2351ES-T1_GE3 | Hersteller : Vishay |
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