SQ2361AEES-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 60V 2.8A SSOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.35 EUR |
| 6000+ | 0.33 EUR |
| 9000+ | 0.31 EUR |
| 30000+ | 0.3 EUR |
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Produktbewertung abgeben
Technische Details SQ2361AEES-T1_GE3 Vishay Siliconix
Description: MOSFET P-CH 60V 2.8A SSOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TA), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V, Power Dissipation (Max): 2W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote SQ2361AEES-T1_GE3 nach Preis ab 0.32 EUR bis 1.05 EUR
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SQ2361AEES-T1_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 2.8A Automotive AEC-Q101 3-Pin SOT-23 T/R |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2361AEES-T1_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 2.8A Automotive AEC-Q101 3-Pin SOT-23 T/R |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2361AEES-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 2.8A SSOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TA) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 68683 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ2361AEES-T1_GE3 | Hersteller : Vishay / Siliconix |
MOSFET -60V Vds +/-20V Vgs AEC-Q101 Qualified |
auf Bestellung 111563 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ2361AEES-T1_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 2.8A Automotive 3-Pin SOT-23 T/R |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2361AEES-T1_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 2.8A Automotive AEC-Q101 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SQ2361AEES-T1_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -11A; 0.67W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.8A Pulsed drain current: -11A Power dissipation: 0.67W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 315mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQ2361AEES-T1_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -11A; 0.67W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.8A Pulsed drain current: -11A Power dissipation: 0.67W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 315mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Application: automotive industry |
Produkt ist nicht verfügbar |