SQ2361EES-T1-GE3

SQ2361EES-T1-GE3

Hersteller:
SQ2361EES-T1-GE3 MOSFET P-CH 60V 2.5A SSOT23
sq2361ees.pdf
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Technische Details SQ2361EES-T1-GE3

Description: MOSFET P-CH 60V 2.5A SOT23, Supplier Device Package: SOT-23-3 (TO-236), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Power - Max: 2W, Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 30V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), Drain to Source Voltage (Vdss): 60V, FET Type: MOSFET P-Channel, Metal Oxide.

Preis SQ2361EES-T1-GE3 ab 0 EUR bis 0 EUR

SQ2361EES-T1-GE3
SQ2361EES-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.5A SOT23
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET P-Channel, Metal Oxide
sq2361ees.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ2361EES-T1-GE3
SQ2361EES-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.5A SOT23
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drain to Source Voltage (Vdss): 60V
sq2361ees.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ2361EES-T1-GE3
SQ2361EES-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.5A SOT23
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drain to Source Voltage (Vdss): 60V
sq2361ees.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen