SQ2361ES-T1_GE3 Vishay
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.32 EUR |
| 6000+ | 0.29 EUR |
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Technische Details SQ2361ES-T1_GE3 Vishay
Description: MOSFET P-CH 60V 2.8A SSOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V, Power Dissipation (Max): 2W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote SQ2361ES-T1_GE3 nach Preis ab 0.29 EUR bis 1.45 EUR
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SQ2361ES-T1_GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 60V 2.8A Automotive AEC-Q101 3-Pin SOT-23 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2361ES-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 2.8A SSOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 63000 Stücke: Lieferzeit 21-28 Tag (e) |
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SQ2361ES-T1_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 2.8A Automotive AEC-Q101 3-Pin SOT-23 T/R |
auf Bestellung 468 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2361ES-T1_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 2.8A Automotive AEC-Q101 3-Pin SOT-23 T/R |
auf Bestellung 468 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2361ES-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 2.8A SSOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 63122 Stücke: Lieferzeit 21-28 Tag (e) |
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SQ2361ES-T1_GE3 | Hersteller : Vishay Semiconductors |
MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified |
auf Bestellung 207780 Stücke: Lieferzeit 14-28 Tag (e) |
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SQ2361ES-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQ2361ES-T1_GE3 - Leistungs-MOSFET, p-Kanal, 60 V, 2.8 A, 0.13 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 2.8A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 2W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.13ohm |
auf Bestellung 227016 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2361ES-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQ2361ES-T1_GE3 - Leistungs-MOSFET, p-Kanal, 60 V, 2.8 A, 0.13 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 2.8A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 2W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.13ohm |
auf Bestellung 227016 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2361ES-T1_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 2.8A Automotive 3-Pin SOT-23 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2361ES-T1_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -11A; 0.67W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.8A Pulsed drain current: -11A Power dissipation: 0.67W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.32Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQ2361ES-T1_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -11A; 0.67W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.8A Pulsed drain current: -11A Power dissipation: 0.67W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.32Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |