SQ2362ES-T1_GE3 Vishay
auf Bestellung 20189 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 404+ | 0.36 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.31 EUR |
| 2500+ | 0.29 EUR |
| 5000+ | 0.27 EUR |
| 10000+ | 0.25 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQ2362ES-T1_GE3 Vishay
Description: MOSFET N-CH 60V 4.3A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V, Power Dissipation (Max): 3W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote SQ2362ES-T1_GE3 nach Preis ab 0.23 EUR bis 1.17 EUR
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SQ2362ES-T1_GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 60V 4.3A Automotive AEC-Q101 3-Pin SOT-23 T/R |
auf Bestellung 14985 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2362ES-T1_GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.3A; Idm: 17A; 1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.3A Pulsed drain current: 17A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 147mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2685 Stücke: Lieferzeit 7-14 Tag (e) |
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SQ2362ES-T1_GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.3A; Idm: 17A; 1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.3A Pulsed drain current: 17A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 147mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
auf Bestellung 2685 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2362ES-T1_GE3 | Hersteller : Vishay / Siliconix |
MOSFET N-Channel 60V AEC-Q101 Qualified |
auf Bestellung 15098 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ2362ES-T1_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 4.3A Automotive AEC-Q101 3-Pin SOT-23 T/R |
auf Bestellung 14990 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2362ES-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 4.3A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V Power Dissipation (Max): 3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ2362ES-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQ2362ES-T1_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 4.3 A, 0.125 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 4.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 3.3W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.125ohm SVHC: No SVHC (07-Nov-2024) |
auf Bestellung 36257 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2362ES-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQ2362ES-T1_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 4.3 A, 0.125 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 4.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 3.3W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.125ohm SVHC: No SVHC (07-Nov-2024) |
auf Bestellung 36257 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2362ES-T1_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 4.3A Automotive 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2362ES-T1_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 4.3A Automotive AEC-Q101 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SQ2362ES-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 4.3A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V Power Dissipation (Max): 3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |