SQ2362ES-T1_GE3

SQ2362ES-T1_GE3

Hersteller: VISHAY
Material: SQ2362ES-T1-GE3 SMD N channel transistors
sq2362es.pdf sq2362es.pdf
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Technische Details SQ2362ES-T1_GE3

Description: MOSFET N-CH 60V 4.4A TO236, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Base Part Number: SQ2362, Package / Case: TO-236-3, SC-59, SOT-23-3, Supplier Device Package: SOT-23-3 (TO-236), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 3W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 30V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc), Drain to Source Voltage (Vdss): 60V.

Preis SQ2362ES-T1_GE3 ab 0 EUR bis 0 EUR

SQ2362ES-T1_GE3
Hersteller: VISHAY
Material: SQ2362ES-T1-GE3 SMD N channel transistors
sq2362es.pdf sq2362es.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ2362ES-T1_GE3
SQ2362ES-T1_GE3
Hersteller: Vishay / Siliconix
MOSFET N-Channel 60V AEC-Q101 Qualified
VISH_S_A0001811175_1-2567668.pdf
auf Bestellung 658 Stücke
Lieferzeit 14-28 Tag (e)
SQ2362ES-T1_GE3
SQ2362ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 4.4A TO236
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SQ2362
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drain to Source Voltage (Vdss): 60V
sq2362es.pdf
auf Bestellung 47031 Stücke
Lieferzeit 21-28 Tag (e)
SQ2362ES-T1_GE3
SQ2362ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 4.3A SOT23-3
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQ2362
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
sq2362es.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ2362ES-T1_GE3
SQ2362ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 4.3A SOT23-3
Base Part Number: SQ2362
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
sq2362es.pdf
auf Bestellung 14 Stücke
Lieferzeit 21-28 Tag (e)