SQ3461EV-T1_GE3 Vishay / Siliconix
auf Bestellung 16631 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 28+ | 1.86 EUR |
| 33+ | 1.61 EUR |
| 100+ | 1.12 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.8 EUR |
| 3000+ | 0.71 EUR |
| 6000+ | 0.67 EUR |
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Technische Details SQ3461EV-T1_GE3 Vishay / Siliconix
Description: MOSFET P-CHANNEL 12V 8A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 4.5V, Power Dissipation (Max): 5W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V.
Weitere Produktangebote SQ3461EV-T1_GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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SQ3461EV-T1_GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 12V 8A Automotive 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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| SQ3461EV-T1_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -6.6A; 1.67W; TSOP6 Kind of package: reel; tape Drain-source voltage: -12V Drain current: -6.6A On-state resistance: 25mΩ Type of transistor: P-MOSFET Power dissipation: 1.67W Polarisation: unipolar Gate charge: 28nC Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: TSOP6 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQ3461EV-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CHANNEL 12V 8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 4.5V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V |
Produkt ist nicht verfügbar |
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SQ3461EV-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CHANNEL 12V 8A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 4.5V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V |
Produkt ist nicht verfügbar |
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| SQ3461EV-T1_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -6.6A; 1.67W; TSOP6 Kind of package: reel; tape Drain-source voltage: -12V Drain current: -6.6A On-state resistance: 25mΩ Type of transistor: P-MOSFET Power dissipation: 1.67W Polarisation: unipolar Gate charge: 28nC Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: TSOP6 |
Produkt ist nicht verfügbar |