SQ4153EY-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CHANNEL 12V 25A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 8.32mOhm @ 14A, 4.5V
Power Dissipation (Max): 7.1W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 6 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.56 EUR |
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Technische Details SQ4153EY-T1_GE3 Vishay Siliconix
Description: MOSFET P-CHANNEL 12V 25A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 8.32mOhm @ 14A, 4.5V, Power Dissipation (Max): 7.1W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 8-SOIC, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 6 V, Qualification: AEC-Q101.
Weitere Produktangebote SQ4153EY-T1_GE3 nach Preis ab 1.5 EUR bis 3.82 EUR
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SQ4153EY-T1_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -14A; 2.3W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -14A Power dissipation: 2.3W Case: SO8 Gate-source voltage: ±8V On-state resistance: 8.32mΩ Mounting: SMD Gate charge: 151nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2475 Stücke: Lieferzeit 7-14 Tag (e) |
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SQ4153EY-T1_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -14A; 2.3W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -14A Power dissipation: 2.3W Case: SO8 Gate-source voltage: ±8V On-state resistance: 8.32mΩ Mounting: SMD Gate charge: 151nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2475 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ4153EY-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CHANNEL 12V 25A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 8.32mOhm @ 14A, 4.5V Power Dissipation (Max): 7.1W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 6 V Qualification: AEC-Q101 |
auf Bestellung 4680 Stücke: Lieferzeit 21-28 Tag (e) |
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SQ4153EY-T1_GE3 | Hersteller : Vishay / Siliconix |
MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified |
auf Bestellung 42256 Stücke: Lieferzeit 14-28 Tag (e) |
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SQ4153EY-T1_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 12V 25A Automotive AEC-Q101 8-Pin SOIC N T/R |
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