SQ4284EY-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 40V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.9W
Drain to Source Voltage (Vdss): 40V
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.73 EUR |
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Technische Details SQ4284EY-T1_GE3 Vishay Siliconix
Description: MOSFET 2N-CH 40V 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.9W, Drain to Source Voltage (Vdss): 40V, Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V, Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQ4284EY-T1_GE3 nach Preis ab 1.7 EUR bis 3.85 EUR
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SQ4284EY-T1_GE3 | Hersteller : Vishay / Siliconix |
MOSFET 40V 8A 3.9W AEC-Q101 Qualified |
auf Bestellung 6727 Stücke: Lieferzeit 14-28 Tag (e) |
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SQ4284EY-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 40V 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.9W Drain to Source Voltage (Vdss): 40V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6816 Stücke: Lieferzeit 21-28 Tag (e) |
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SQ4284EY-T1_GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.4A; 3.9W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.4A Power dissipation: 3.9W Case: SO8 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQ4284EY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 40V 8A 8SOIC |
Produkt ist nicht verfügbar |
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SQ4284EY-T1_GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.4A; 3.9W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.4A Power dissipation: 3.9W Case: SO8 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |