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SQ4401EY-T1_BE3

SQ4401EY-T1_BE3 Vishay

sq4401ey.pdf Hersteller: Vishay
Trans MOSFET P-CH 40V 17.3A Automotive AEC-Q101 8-Pin SOIC N T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2500+2.37 EUR
Mindestbestellmenge: 2500
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Technische Details SQ4401EY-T1_BE3 Vishay

Description: MOSFET P-CH 40V 17.3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V, Power Dissipation (Max): 7.14W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote SQ4401EY-T1_BE3 nach Preis ab 2.94 EUR bis 6.81 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SQ4401EY-T1_BE3 SQ4401EY-T1_BE3 Hersteller : Vishay Siliconix Description: MOSFET P-CH 40V 17.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Power Dissipation (Max): 7.14W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+3.05 EUR
5000+ 2.94 EUR
Mindestbestellmenge: 2500
SQ4401EY-T1_BE3 SQ4401EY-T1_BE3 Hersteller : Vishay Siliconix Description: MOSFET P-CH 40V 17.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Power Dissipation (Max): 7.14W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14140 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.76 EUR
10+ 5.62 EUR
100+ 4.47 EUR
500+ 3.78 EUR
1000+ 3.21 EUR
Mindestbestellmenge: 4
SQ4401EY-T1_BE3 SQ4401EY-T1_BE3 Hersteller : Vishay Semiconductors MOSFET P-CHANNEL 40V
auf Bestellung 26913 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+6.81 EUR
10+ 5.38 EUR
100+ 4.52 EUR
250+ 4.16 EUR
500+ 3.8 EUR
1000+ 3.25 EUR
2500+ 2.96 EUR
Mindestbestellmenge: 8
SQ4401EY-T1"BE3 SQ4401EY-T1"BE3 Hersteller : VISHAY VISH-S-A0004852711-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: VISHAY - SQ4401EY-T1"BE3 - MOSFET, P-CH, 40V, 17.3A, SOIC
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 0
Dauer-Drainstrom Id: 0
hazardous: false
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 0
euEccn: NLR
Verlustleistung: 0
Bauform - Transistor: SOIC
Anzahl der Pins: 0
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: P Channel
Rds(on)-Prüfspannung: 0
Betriebstemperatur, max.: 0
Drain-Source-Durchgangswiderstand: 0
directShipCharge: 25
SVHC: No SVHC (10-Jun-2022)
auf Bestellung 359 Stücke:
Lieferzeit 14-21 Tag (e)