SQ4942EY-T1-GE3
SQ4942EY-T1-GE3
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 40V 8A 8SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 8-SOIC N
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Power - Max: 4.4W
Input Capacitance (Ciss) (Max) @ Vds: 1760pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
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Technische Details SQ4942EY-T1-GE3
Description: MOSFET 2N-CH 40V 8A 8SOIC, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A, Drain to Source Voltage (Vdss): 40V, FET Feature: Logic Level Gate, FET Type: 2 N-Channel (Dual), Supplier Device Package: 8-SOIC N, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Power - Max: 4.4W, Input Capacitance (Ciss) (Max) @ Vds: 1760pF @ 25V, Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V.