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SQ7414CENW-T1_GE3

SQ7414CENW-T1_GE3 Vishay Siliconix


sq7414cenw.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 18A PPAK1212-8W
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8.7A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.91 EUR
6000+ 0.87 EUR
9000+ 0.83 EUR
Mindestbestellmenge: 3000
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Technische Details SQ7414CENW-T1_GE3 Vishay Siliconix

Description: MOSFET N-CH 60V 18A PPAK1212-8W, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8W, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 8.7A, 10V, Power Dissipation (Max): 62W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8W, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 30 V, Qualification: AEC-Q101.

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SQ7414CENW-T1_GE3 SQ7414CENW-T1_GE3 Hersteller : Vishay / Siliconix sq7414cenw.pdf MOSFET 60V Vds 20V Vgs PowerPAK 1212-8W
auf Bestellung 128097 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
26+2.06 EUR
32+ 1.68 EUR
100+ 1.32 EUR
500+ 1.13 EUR
1000+ 0.93 EUR
3000+ 0.92 EUR
6000+ 0.88 EUR
Mindestbestellmenge: 26
SQ7414CENW-T1_GE3 SQ7414CENW-T1_GE3 Hersteller : Vishay Siliconix sq7414cenw.pdf Description: MOSFET N-CH 60V 18A PPAK1212-8W
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8.7A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 25753 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.21 EUR
15+ 1.8 EUR
100+ 1.41 EUR
500+ 1.19 EUR
1000+ 0.97 EUR
Mindestbestellmenge: 12
SQ7414CENW-T1_GE3 SQ7414CENW-T1_GE3 Hersteller : VISHAY 2616965.pdf Description: VISHAY - SQ7414CENW-T1_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 18 A, 0.016 ohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 18A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 62W
Anzahl der Pins: 8Pin(s)
productTraceability: No
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.016ohm
auf Bestellung 58975 Stücke:
Lieferzeit 14-21 Tag (e)
SQ7414CENW-T1_GE3 SQ7414CENW-T1_GE3 Hersteller : Vishay sq7414cenw.pdf Trans MOSFET N-CH 60V 18A Automotive 8-Pin PowerPAK-W EP T/R
Produkt ist nicht verfügbar
SQ7414CENW-T1_GE3 Hersteller : VISHAY sq7414cenw.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 18A; Idm: 72A; 62W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 18A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 72A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQ7414CENW-T1_GE3 Hersteller : VISHAY sq7414cenw.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 18A; Idm: 72A; 62W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 18A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 72A
Mounting: SMD
Produkt ist nicht verfügbar