SQ7415AEN-T1_GE3
verfügbar/auf Bestellung
auf Bestellung 351 Stücke
Lieferzeit 14-21 Tag (e)
auf Bestellung 351 Stücke
Lieferzeit 14-21 Tag (e)
Technische Details SQ7415AEN-T1-GE3
Description: MOSFET P-CH 60V 16A PPAK1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 53W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1385pF @ 25V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Drain to Source Voltage (Vdss): 60V, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Part Status: Last Time Buy, Packaging: Tape & Reel (TR), Base Part Number: SQ7415, Package / Case: PowerPAK® 1212-8, Supplier Device Package: PowerPAK® 1212-8, Manufacturer: Vishay Siliconix.
Preis SQ7415AEN-T1-GE3 ab 0.67 EUR bis 1.23 EUR
 Hersteller: Vishay Semiconductors MOSFET 60V 16A 53W AEC-Q101 Qualified 
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auf Bestellung 9143 Stücke Lieferzeit 14-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET P-CH 60V 16A PPAK1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 53W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1385pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Last Time Buy Packaging: Tape & Reel (TR) Base Part Number: SQ7415 Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Manufacturer: Vishay Siliconix
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: Vishay Siliconix Description: MOSFET P-CH 60V 16A 1212-8 Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) Package / Case: PowerPAK® 1212-8 FET Type: P-Channel Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 53W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1385pF @ 25V
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auf Bestellung 3527 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET P-CH 60V 16A PPAK1212-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Last Time Buy Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Base Part Number: SQ7415 Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 53W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1385pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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