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SQ9407EY-T1_BE3

SQ9407EY-T1_BE3 Vishay Siliconix


sq9407ey.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 4.6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 3.75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12500 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.11 EUR
5000+ 1.06 EUR
12500+ 1.01 EUR
Mindestbestellmenge: 2500
Produktrezensionen
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Technische Details SQ9407EY-T1_BE3 Vishay Siliconix

Description: MOSFET P-CH 60V 4.6A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V, Power Dissipation (Max): 3.75W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote SQ9407EY-T1_BE3 nach Preis ab 1.08 EUR bis 2.76 EUR

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Preis ohne MwSt
SQ9407EY-T1_BE3 SQ9407EY-T1_BE3 Hersteller : Vishay Siliconix sq9407ey.pdf Description: MOSFET P-CH 60V 4.6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 3.75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12617 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.7 EUR
12+ 2.2 EUR
100+ 1.71 EUR
500+ 1.45 EUR
1000+ 1.18 EUR
Mindestbestellmenge: 10
SQ9407EY-T1_BE3 SQ9407EY-T1_BE3 Hersteller : Vishay Semiconductors sq9407ey.pdf MOSFET P-CHANNEL 60 V
auf Bestellung 77627 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
19+2.76 EUR
24+ 2.25 EUR
100+ 1.75 EUR
500+ 1.48 EUR
1000+ 1.21 EUR
2500+ 1.12 EUR
5000+ 1.08 EUR
Mindestbestellmenge: 19
SQ9407EY-T1_BE3
Produktcode: 198760
sq9407ey.pdf Transistoren > Transistoren P-Kanal-Feld
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SQ9407EY-T1_BE3 SQ9407EY-T1_BE3 Hersteller : Vishay sq9407ey.pdf Trans MOSFET P-CH 60V 4.6A Automotive AEC-Q101 8-Pin SOIC N T/R
Produkt ist nicht verfügbar
SQ9407EY-T1_BE3 SQ9407EY-T1_BE3 Hersteller : Vishay sq9407ey.pdf Trans MOSFET P-CH 60V 4.6A Automotive AEC-Q101 8-Pin SOIC N T/R
Produkt ist nicht verfügbar