SQ9945BEY-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 60V 5.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.06 EUR |
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Technische Details SQ9945BEY-T1_GE3 Vishay Siliconix
Description: MOSFET 2N-CH 60V 5.4A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 5.4A, Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V, Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote SQ9945BEY-T1_GE3 nach Preis ab 0.69 EUR bis 2.99 EUR
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SQ9945BEY-T1_GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.1A; 4W; SO8 Power dissipation: 4W Mounting: SMD Kind of package: reel; tape Case: SO8 Drain-source voltage: 60V Drain current: 3.1A On-state resistance: 64mΩ Type of transistor: N-MOSFET x2 Polarisation: unipolar Gate charge: 8nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2252 Stücke: Lieferzeit 7-14 Tag (e) |
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SQ9945BEY-T1_GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.1A; 4W; SO8 Power dissipation: 4W Mounting: SMD Kind of package: reel; tape Case: SO8 Drain-source voltage: 60V Drain current: 3.1A On-state resistance: 64mΩ Type of transistor: N-MOSFET x2 Polarisation: unipolar Gate charge: 8nC Kind of channel: enhanced Gate-source voltage: ±20V |
auf Bestellung 2252 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ9945BEY-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 60V 5.4A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.4A Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 4986 Stücke: Lieferzeit 21-28 Tag (e) |
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SQ9945BEY-T1_GE3 | Hersteller : Vishay / Siliconix |
MOSFET 60V 5.4A 4W AEC-Q101 Qualified |
auf Bestellung 13873 Stücke: Lieferzeit 14-28 Tag (e) |
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SQ9945BEY-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQ9945BEY-T1_GE3 - Dual-MOSFET, n-Kanal, 60 V, 6 A, 0.045 ohm, SOIC, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60 Dauer-Drainstrom Id: 6 Verlustleistung Pd: 4 Gate-Source-Schwellenspannung, max.: 2 Bauform - Transistor: SOIC Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8 Produktpalette: TrenchFET Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.045 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 SVHC: No SVHC (10-Jun-2022) |
auf Bestellung 3889 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ9945BEY-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQ9945BEY-T1_GE3 - Dual-MOSFET, n-Kanal, 60 V, 6 A, 0.045 ohm, SOIC, Oberflächenmontage SVHC: No SVHC (10-Jun-2022) |
auf Bestellung 3889 Stücke: Lieferzeit 14-21 Tag (e) |
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auf Bestellung 798200 Stücke: Lieferzeit 21-28 Tag (e) |
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SQ9945BEY-T1_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 5.4A Automotive 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SQ9945BEY-T1_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 5.4A Automotive 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SQ9945BEY-T1_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 5.4A Automotive 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SQ9945BEY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 5.4A Automotive 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SQ9945BEY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 60V 5.4A 8SOIC |
Produkt ist nicht verfügbar |