SQ9945BEY-T1_BE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 60V 5.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 1975 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 2.55 EUR |
| 13+ | 2.09 EUR |
| 100+ | 1.62 EUR |
| 500+ | 1.38 EUR |
| 1000+ | 1.12 EUR |
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Technische Details SQ9945BEY-T1_BE3 Vishay Siliconix
Description: MOSFET 2N-CH 60V 5.4A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V, Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote SQ9945BEY-T1_BE3 nach Preis ab 1.01 EUR bis 2.56 EUR
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SQ9945BEY-T1_BE3 | Hersteller : Vishay / Siliconix |
MOSFET DUAL N-CH 60V (D-S) |
auf Bestellung 55540 Stücke: Lieferzeit 14-28 Tag (e) |
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| SQ9945BEY-T1_BE3 | Hersteller : Vishay |
N-Channel MOSFET |
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SQ9945BEY-T1_BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 60V 5.4A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |