SQA405EJ-T1_GE3

SQA405EJ-T1_GE3

SQA405EJ-T1_GE3

Hersteller: Vishay / Siliconix
MOSFET -40V Vds 20V Vgs PowerPAK SC-70
sqa405ej-1324643.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 3000 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details SQA405EJ-T1_GE3

Description: MOSFET P-CHAN 40V, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Part Status: Active, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 1815pF @ 25V, Power Dissipation (Max): 13.6W (Tc), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: PowerPAK® SC-70-6 Single, Package / Case: PowerPAK® SC-70-6, Base Part Number: SQA405.

Preis SQA405EJ-T1_GE3 ab 0 EUR bis 0 EUR

SQA405EJ-T1_GE3
SQA405EJ-T1_GE3
Hersteller: Vishay Semiconductors
MOSFET -40V Vds 20V Vgs PowerPAK SC-70
sqa405ej-1766674.pdf
auf Bestellung 22363 Stücke
Lieferzeit 14-28 Tag (e)
SQA405EJ-T1_GE3
SQA405EJ-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHAN 40V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1815pF @ 25V
Power Dissipation (Max): 13.6W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Base Part Number: SQA405
sqa405ej.pdf
auf Bestellung 2895 Stücke
Lieferzeit 21-28 Tag (e)
SQA405EJ-T1_GE3
SQA405EJ-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 10A PPAK SC70-6
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1815pF @ 25V
Power Dissipation (Max): 13.6W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Out of Bounds
Package / Case: PowerPAK® SC-70-6
Base Part Number: SQA405
sqa405ej.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQA405EJ-T1_GE3
SQA405EJ-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 10A PPAK SC70-6
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1815pF @ 25V
Power Dissipation (Max): 13.6W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Out of Bounds
Package / Case: PowerPAK® SC-70-6
Base Part Number: SQA405
sqa405ej.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen