Produkte > VISHAY SEMICONDUCTORS > SQD07N25-350H_GE3
SQD07N25-350H_GE3

SQD07N25-350H_GE3 Vishay Semiconductors


sqd07n25-350h.pdf Hersteller: Vishay Semiconductors
MOSFET N-Channel 250V AEC-Q101 Qualified
auf Bestellung 7372 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
14+3.82 EUR
17+ 3.15 EUR
100+ 2.44 EUR
500+ 2.07 EUR
1000+ 1.68 EUR
2000+ 1.54 EUR
4000+ 1.51 EUR
Mindestbestellmenge: 14
Produktrezensionen
Produktbewertung abgeben

Technische Details SQD07N25-350H_GE3 Vishay Semiconductors

Description: MOSFET N-CH 250V 7A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V, Power Dissipation (Max): 71W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 25 V.

Weitere Produktangebote SQD07N25-350H_GE3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SQD07N25-350H_GE3 SQD07N25-350H_GE3 Hersteller : Vishay sqd25n06-22l.pdf Trans MOSFET N-CH 250V 7A Automotive 3-Pin(2+Tab) TO-252AA
Produkt ist nicht verfügbar
SQD07N25-350H_GE3 SQD07N25-350H_GE3 Hersteller : Vishay Siliconix sqd07n25-350h.pdf Description: MOSFET N-CH 250V 7A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 25 V
Produkt ist nicht verfügbar
SQD07N25-350H_GE3 SQD07N25-350H_GE3 Hersteller : Vishay Siliconix sqd07n25-350h.pdf Description: MOSFET N-CH 250V 7A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 25 V
Produkt ist nicht verfügbar