SQD07N25-350H_GE3

SQD07N25-350H_GE3

SQD07N25-350H_GE3

Hersteller: Vishay Semiconductors
MOSFET N-Channel 250V AEC-Q101 Qualified
sqd07n25_350h-1764879.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 1828 Stücke
Lieferzeit 14-28 Tag (e)
12+ 4.47 EUR
13+ 4.03 EUR
100+ 3.15 EUR
500+ 2.58 EUR

Technische Details SQD07N25-350H_GE3

Description: MOSFET N-CH 250V 7A TO252AA, Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 71W (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

Preis SQD07N25-350H_GE3 ab 2.58 EUR bis 4.47 EUR

SQD07N25-350H_GE3
SQD07N25-350H_GE3
Hersteller: Vishay
Trans MOSFET N-CH 250V 7A Automotive 3-Pin(2+Tab) TO-252AA
sqd25n06-22l.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD07N25-350H-GE3
Hersteller: Vishay
Trans MOSFET N-CH 250V 7A Automotive 3-Pin(2+Tab) TO-252AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD07N25-350H_GE3
SQD07N25-350H_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 7A TO252AA
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
sqd07n25-350h.pdf
auf Bestellung 1249 Stücke
Lieferzeit 21-28 Tag (e)
SQD07N25-350H_GE3
SQD07N25-350H_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 7A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
sqd07n25-350h.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen