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SQD100N02-3M5L_GE3

SQD100N02-3M5L_GE3 Vishay Semiconductors

sqd100n02-3m5l.pdf Hersteller: Vishay Semiconductors
MOSFET N Ch 20Vds 20Vgs AEC-Q101 Qualified
auf Bestellung 5942 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
14+3.72 EUR
18+ 3.04 EUR
100+ 2.37 EUR
500+ 2.01 EUR
1000+ 1.64 EUR
2000+ 1.54 EUR
4000+ 1.45 EUR
Mindestbestellmenge: 14
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Technische Details SQD100N02-3M5L_GE3 Vishay Semiconductors

Description: MOSFET N-CH 20V 100A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V.

Weitere Produktangebote SQD100N02-3M5L_GE3 nach Preis ab 1.89 EUR bis 4.16 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SQD100N02-3M5L_GE3 SQD100N02-3M5L_GE3 Hersteller : Vishay Siliconix sqd100n02-3m5l.pdf Description: MOSFET N-CH 20V 100A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
auf Bestellung 1980 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.16 EUR
10+ 3.72 EUR
100+ 2.9 EUR
500+ 2.4 EUR
1000+ 1.89 EUR
Mindestbestellmenge: 7
SQD100N02-3M5L_GE3 Hersteller : Vishay sqd100n02-3m5l.pdf Automotive N-Channel 20 V MOSFET
Produkt ist nicht verfügbar
SQD100N02-3M5L_GE3 SQD100N02-3M5L_GE3 Hersteller : Vishay Siliconix sqd100n02-3m5l.pdf Description: MOSFET N-CH 20V 100A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
Produkt ist nicht verfügbar