SQD15N06-42L-GE3

SQD15N06-42L-GE3

Hersteller: Vishay
Trans MOSFET N-CH 60V 15A Automotive 3-Pin(2+Tab) DPAK
sqd15n06-42l.pdf
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Technische Details SQD15N06-42L-GE3

Description: MOSFET N-CH 60V 15A, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Supplier Device Package: TO-252, (D-Pak), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 37W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Drain to Source Voltage (Vdss): 60V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR).

Preis SQD15N06-42L-GE3 ab 0 EUR bis 0 EUR

SQD15N06-42L_GE3
SQD15N06-42L_GE3
Hersteller: Vishay / Siliconix
MOSFET 60V 15A 37W AEC-Q101 Qualified
sqd15n06_42l-1765181.pdf
auf Bestellung 650 Stücke
Lieferzeit 14-28 Tag (e)
SQD15N06-42L-GE3
Hersteller: Vishay
Trans MOSFET N-CH 60V 15A Automotive 3-Pin(2+Tab) DPAK
sqd15n06-42l.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD15N06-42L-GE3
SQD15N06-42L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 15A TO252
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 37W
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
sqd15n06-42l.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD15N06-42L_GE3
SQD15N06-42L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 15A
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 37W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
sqd15n06-42l.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD15N06-42L_GE3
SQD15N06-42L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 15A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 37W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
sqd15n06-42l.pdf
auf Bestellung 917 Stücke
Lieferzeit 21-28 Tag (e)