SQD30N05-20L_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 55V 30A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 25 V
Description: MOSFET N-CH 55V 30A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2000+ | 1.66 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQD30N05-20L_GE3 Vishay Siliconix
Description: VISHAY - SQD30N05-20L_GE3 - Leistungs-MOSFET, n-Kanal, 55 V, 30 A, 0.016 ohm, TO-252 (DPAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 55V, rohsCompliant: YES, Dauer-Drainstrom Id: 30A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2V, euEccn: NLR, Verlustleistung: -mW, Bauform - Transistor: TO-252 (DPAK), Anzahl der Pins: 3Pin(s), Produktpalette: Multicomp Pro RJ45 Adapter, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.016ohm.
Weitere Produktangebote SQD30N05-20L_GE3 nach Preis ab 1.51 EUR bis 3.9 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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SQD30N05-20L_GE3 | Hersteller : Vishay Semiconductors | MOSFET N-Channel 55V AEC-Q101 Qualified |
auf Bestellung 31489 Stücke: Lieferzeit 14-28 Tag (e) |
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SQD30N05-20L_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 55V 30A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 25 V |
auf Bestellung 5696 Stücke: Lieferzeit 21-28 Tag (e) |
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SQD30N05-20L_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQD30N05-20L_GE3 - Leistungs-MOSFET, n-Kanal, 55 V, 30 A, 0.016 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: -mW Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.016ohm |
auf Bestellung 8240 Stücke: Lieferzeit 14-21 Tag (e) |
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SQD30N05-20L_GE3 | Hersteller : Vishay | Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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SQD30N05-20L-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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SQD30N05-20L_GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 55V; 30A; Idm: 120A; 50W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 30A Pulsed drain current: 120A Power dissipation: 50W Case: TO252 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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SQD30N05-20L_GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 55V; 30A; Idm: 120A; 50W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 30A Pulsed drain current: 120A Power dissipation: 50W Case: TO252 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |