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SQD40N06-14L_GE3

SQD40N06-14L_GE3 Vishay Siliconix

sqd40n06-14l.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 40A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2105 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2000+1.77 EUR
6000+ 1.71 EUR
Mindestbestellmenge: 2000
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Technische Details SQD40N06-14L_GE3 Vishay Siliconix

Description: MOSFET N-CH 60V 40A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2105 pF @ 25 V.

Weitere Produktangebote SQD40N06-14L_GE3 nach Preis ab 1.78 EUR bis 3.98 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SQD40N06-14L_GE3 SQD40N06-14L_GE3 Hersteller : Vishay Siliconix sqd40n06-14l.pdf Description: MOSFET N-CH 60V 40A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2105 pF @ 25 V
auf Bestellung 6112 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.93 EUR
10+ 3.27 EUR
100+ 2.6 EUR
500+ 2.2 EUR
1000+ 1.87 EUR
Mindestbestellmenge: 7
SQD40N06-14L_GE3 SQD40N06-14L_GE3 Hersteller : Vishay Semiconductors sqd40n06-14l.pdf MOSFET 55V 40A 75W AEC-Q101 Qualified
auf Bestellung 54618 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
14+3.98 EUR
16+ 3.28 EUR
100+ 2.63 EUR
250+ 2.49 EUR
500+ 2.19 EUR
1000+ 1.88 EUR
2000+ 1.78 EUR
Mindestbestellmenge: 14
SQD40N06-14L_GE3 SQD40N06-14L_GE3 Hersteller : Vishay sqd40n06-14l.pdf Trans MOSFET N-CH 60V 40A Automotive
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SQD40N06-14L-GE3 SQD40N06-14L-GE3 Hersteller : Vishay sqd40n06-14l.pdf Trans MOSFET N-CH 60V 40A Automotive
Produkt ist nicht verfügbar
SQD40N06-14L-GE3 SQD40N06-14L-GE3 Hersteller : Vishay Siliconix sqd40n06-14l.pdf Description: MOSFET N-CH 60V 40A TO-252
Produkt ist nicht verfügbar