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SQD50N04-09H-GE3

SQD50N04-09H-GE3 Vishay


sqd50n04.pdf Hersteller: Vishay
Trans MOSFET N-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK
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Technische Details SQD50N04-09H-GE3 Vishay

Description: MOSFET N-CH 40V 50A TO252, Packaging: Cut Tape (CT), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V, Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-252AA, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 25 V.

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SQD50N04-09H-GE3 SQD50N04-09H-GE3 Hersteller : Vishay Siliconix sqd50n04.pdf Description: MOSFET N-CH 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 25 V
Produkt ist nicht verfügbar