Produkte > VISHAY SILICONIX > SQD50N04-5m6_T4GE3
SQD50N04-5m6_T4GE3

SQD50N04-5m6_T4GE3 Vishay Siliconix

sqd50n04-5m6.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 40801 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.59 EUR
5000+ 1.52 EUR
12500+ 1.45 EUR
Mindestbestellmenge: 2500
Produktrezensionen
Produktbewertung abgeben

Technische Details SQD50N04-5m6_T4GE3 Vishay Siliconix

Description: MOSFET N-CH 40V 50A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V, Power Dissipation (Max): 71W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-252AA, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote SQD50N04-5m6_T4GE3 nach Preis ab 1.53 EUR bis 3.87 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SQD50N04-5m6_T4GE3 SQD50N04-5m6_T4GE3 Hersteller : Vishay Siliconix sqd50n04-5m6.pdf Description: MOSFET N-CH 40V 50A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 42117 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.85 EUR
10+ 3.15 EUR
100+ 2.45 EUR
500+ 2.08 EUR
1000+ 1.69 EUR
Mindestbestellmenge: 7
SQD50N04-5m6_T4GE3 SQD50N04-5m6_T4GE3 Hersteller : Vishay Semiconductors sqd50n04-5m6.pdf MOSFET 40V 50A 71W AEC-Q101 Qualified
auf Bestellung 4165 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
14+3.87 EUR
17+ 3.2 EUR
100+ 2.49 EUR
500+ 2.09 EUR
1000+ 1.71 EUR
2500+ 1.57 EUR
5000+ 1.53 EUR
Mindestbestellmenge: 14
SQD50N04-5M6-T4GE3 Hersteller : Vishay sqd50n04-5m6.pdf P-Channel Power MOSFET Automotive AEC-Q101
Produkt ist nicht verfügbar
SQD50N04-5M6-T4GE3 SQD50N04-5M6-T4GE3 Hersteller : Vishay / Siliconix MOSFET RECOMMENDED ALT 78-SQD50N04-5M6T4GE
Produkt ist nicht verfügbar