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SQD50N10-8m9L_GE3

SQD50N10-8m9L_GE3 Vishay Siliconix

sqd50n10-8m9l.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 50A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 15A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2000+1.83 EUR
6000+ 1.76 EUR
Mindestbestellmenge: 2000
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Technische Details SQD50N10-8m9L_GE3 Vishay Siliconix

Description: MOSFET N-CH 100V 50A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 8.9mOhm @ 15A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote SQD50N10-8m9L_GE3 nach Preis ab 1.84 EUR bis 4.06 EUR

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SQD50N10-8m9L_GE3 SQD50N10-8m9L_GE3 Hersteller : Vishay Siliconix sqd50n10-8m9l.pdf Description: MOSFET N-CH 100V 50A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 15A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7894 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.06 EUR
10+ 3.36 EUR
100+ 2.68 EUR
500+ 2.27 EUR
1000+ 1.92 EUR
Mindestbestellmenge: 7
SQD50N10-8m9L_GE3 SQD50N10-8m9L_GE3 Hersteller : Vishay Semiconductors sqd50n10-8m9l.pdf MOSFET 100V 50A 45watt AEC-Q101 Qualified
auf Bestellung 22780 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
13+4.06 EUR
16+ 3.38 EUR
100+ 2.68 EUR
250+ 2.47 EUR
500+ 2.26 EUR
1000+ 1.93 EUR
2000+ 1.84 EUR
Mindestbestellmenge: 13
SQD50N10-8M9L-GE3 Hersteller : Vishay sqd50n10-8m9l.pdf Trans MOSFET N-CH 100V 50A Automotive 3-Pin(2+Tab) TO-252AA
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SQD50N10-8M9L_GE3 SQD50N10-8M9L_GE3 Hersteller : Vishay sqd50n10-8m9l.pdf Trans MOSFET N-CH 100V 50A Automotive 3-Pin(2+Tab) TO-252AA
Produkt ist nicht verfügbar