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SQD50P04-09L_GE3

SQD50P04-09L_GE3 Vishay Siliconix

sqd50p04.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6675 pF @ 20 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+2.06 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SQD50P04-09L_GE3 Vishay Siliconix

Description: MOSFET P-CH 40V 50A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6675 pF @ 20 V.

Weitere Produktangebote SQD50P04-09L_GE3 nach Preis ab 2.15 EUR bis 6.14 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SQD50P04-09L_GE3 SQD50P04-09L_GE3 Hersteller : Vishay / Siliconix sqd50p04.pdf MOSFETs 40V 50A 136W AEC-Q101 Qualified
auf Bestellung 23485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.26 EUR
10+3.77 EUR
25+3.4 EUR
100+2.9 EUR
250+2.68 EUR
500+2.41 EUR
1000+2.24 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SQD50P04-09L_GE3 SQD50P04-09L_GE3 Hersteller : Vishay Siliconix sqd50p04.pdf Description: MOSFET P-CH 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6675 pF @ 20 V
auf Bestellung 9056 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.14 EUR
10+4.03 EUR
100+2.82 EUR
500+2.43 EUR
1000+2.15 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SQD50P04-09L_GE3 SQD50P04-09L_GE3 Hersteller : Vishay sqd50p04.pdf Trans MOSFET P-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SQD50P04-09L-GE3 SQD50P04-09L-GE3 Hersteller : Vishay sqd50p04.pdf Trans MOSFET P-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
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SQD50P04-09L-GE3 SQD50P04-09L-GE3 Hersteller : Vishay Siliconix sqd50p04.pdf Description: MOSFET P-CH 40V 50A TO252
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SQD50P04-09L-GE3 SQD50P04-09L-GE3 Hersteller : Vishay / Siliconix sqd50p04.pdf MOSFETs RECOMMENDED ALT SQD50P04-09L_GE3
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