SQD50P04-09L_GE3

SQD50P04-09L_GE3

SQD50P04-09L_GE3

Hersteller: Vishay
Trans MOSFET P-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R
sqd50p04.pdf
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Technische Details SQD50P04-09L_GE3

Description: MOSFET P-CH 40V 50A, Drain to Source Voltage (Vdss): 40V, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Part Status: Active, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Supplier Device Package: TO-252, (D-Pak), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 136W (Tc), Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 6675pF @ 20V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V, Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc).

Preis SQD50P04-09L_GE3 ab 0 EUR bis 0 EUR

SQD50P04-09L_GE3
SQD50P04-09L_GE3
Hersteller: Vishay / Siliconix
MOSFET 40V 50A 136W AEC-Q101 Qualified
sqd50p04-1764563.pdf
auf Bestellung 11390 Stücke
Lieferzeit 14-28 Tag (e)
SQD50P04-09L_GE3
SQD50P04-09L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6675 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
sqd50p04.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD50P04-09L_GE3
SQD50P04-09L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 6675 pF @ 20 V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V
sqd50p04.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD50P04-09L_GE3
SQD50P04-09L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A
Drain to Source Voltage (Vdss): 40V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6675pF @ 20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
sqd50p04.pdf
auf Bestellung 2036 Stücke
Lieferzeit 21-28 Tag (e)
SQD50P04-09L-GE3
SQD50P04-09L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 136W
Input Capacitance (Ciss) (Max) @ Vds: 6675pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET P-Channel, Metal Oxide
sqd50p04.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen