SQD50P04-13L_GE3 Vishay
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 2.65 EUR |
| 4000+ | 2.46 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQD50P04-13L_GE3 Vishay
Description: MOSFET P-CH 40V 50A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 17A, 10V, Power Dissipation (Max): 3W (Ta), 136W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 20 V.
Weitere Produktangebote SQD50P04-13L_GE3 nach Preis ab 2.46 EUR bis 7.28 EUR
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SQD50P04-13L_GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQD50P04-13L_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 16000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQD50P04-13L_GE3 | Hersteller : Vishay / Siliconix |
MOSFET 40V 50A 83W AEC-Q101 Qualified |
auf Bestellung 14048 Stücke: Lieferzeit 14-28 Tag (e) |
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SQD50P04-13L_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 40V 50A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 17A, 10V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 20 V |
auf Bestellung 6 Stücke: Lieferzeit 21-28 Tag (e) |
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SQD50P04-13L_GE3 Produktcode: 185273 |
Transistoren > Transistoren P-Kanal-Feld |
Produkt ist nicht verfügbar
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SQD50P04-13L_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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SQD50P04-13L_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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SQD50P04-13L-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 40V 50A TO252 |
Produkt ist nicht verfügbar |
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SQD50P04-13L_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 40V 50A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 17A, 10V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 20 V |
Produkt ist nicht verfügbar |
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SQD50P04-13L-GE3 | Hersteller : Vishay / Siliconix |
MOSFET RECOMMENDED ALT 78-SQD50P04-13L_GE3 |
Produkt ist nicht verfügbar |