SQD50P06-15L_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 60V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5910 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 2.12 EUR |
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Technische Details SQD50P06-15L_GE3 Vishay Siliconix
Description: MOSFET P-CH 60V 50A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5910 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQD50P06-15L_GE3 nach Preis ab 2.22 EUR bis 5.53 EUR
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SQD50P06-15L_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 50A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5910 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 3414 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50P06-15L_GE3 | Hersteller : Vishay / Siliconix |
MOSFETs 60V 50A 136W AEC-Q101 Qualified |
auf Bestellung 10029 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50P06-15L_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 50A Automotive 3-Pin(2+Tab) TO-252AA |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQD50P06-15L-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 50A Automotive 3-Pin(2+Tab) TO-252AA |
Produkt ist nicht verfügbar |
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SQD50P06-15L_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -200A; 45W Case: DPAK; TO252 Kind of package: reel; tape Application: automotive industry Power dissipation: 45W Polarisation: unipolar Gate charge: 150nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -200A Mounting: SMD Drain-source voltage: -60V Drain current: -50A On-state resistance: 32mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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SQD50P06-15L-GE3 | Hersteller : Vishay / Siliconix | MOSFETs RECOMMENDED ALT SQD5 |
Produkt ist nicht verfügbar |
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SQD50P06-15L_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -200A; 45W Case: DPAK; TO252 Kind of package: reel; tape Application: automotive industry Power dissipation: 45W Polarisation: unipolar Gate charge: 150nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -200A Mounting: SMD Drain-source voltage: -60V Drain current: -50A On-state resistance: 32mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |