SQJ142ELP-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 40V 175A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 10A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3015 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2596 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 2.65 EUR |
| 12+ | 2.18 EUR |
| 100+ | 1.7 EUR |
| 500+ | 1.44 EUR |
| 1000+ | 1.17 EUR |
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Technische Details SQJ142ELP-T1_GE3 Vishay Siliconix
Description: MOSFET N-CH 40V 175A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 175A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 10A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3015 pF @ 25 V, Qualification: AEC-Q101.
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SQJ142ELP-T1_GE3 | Hersteller : Vishay Semiconductors |
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auf Bestellung 2733 Stücke: Lieferzeit 14-28 Tag (e) |
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SQJ142ELP-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 175A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 175A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 10A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3015 pF @ 25 V Qualification: AEC-Q101 |
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