Produkte > VISHAY SILICONIX > SQJ148EP-T1_GE3
SQJ148EP-T1_GE3

SQJ148EP-T1_GE3 Vishay Siliconix

sqj148ep.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 15A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.6 EUR
6000+ 0.57 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details SQJ148EP-T1_GE3 Vishay Siliconix

Description: MOSFET N-CH 40V 15A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 7A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote SQJ148EP-T1_GE3 nach Preis ab 0.68 EUR bis 1.59 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SQJ148EP-T1_GE3 SQJ148EP-T1_GE3 Hersteller : Vishay Siliconix sqj148ep.pdf Description: MOSFET N-CH 40V 15A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 8555 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.59 EUR
19+ 1.37 EUR
100+ 0.95 EUR
500+ 0.79 EUR
1000+ 0.68 EUR
Mindestbestellmenge: 17
SQJ148EP-T1_GE3 SQJ148EP-T1_GE3 Hersteller : Vishay / Siliconix sqj148ep-1766475.pdf MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified
auf Bestellung 158 Stücke:
Lieferzeit 14-28 Tag (e)