SQJ200EP-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 20V 20A/60A PPAK SO
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W, 48W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 10V
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.33 EUR |
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Technische Details SQJ200EP-T1_GE3 Vishay Siliconix
Description: MOSFET 2N-CH 20V 20A/60A PPAK SO, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 27W, 48W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 20A, 60A, Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 10V, Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric, Part Status: Active.
Weitere Produktangebote SQJ200EP-T1_GE3 nach Preis ab 1.1 EUR bis 3.15 EUR
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SQJ200EP-T1_GE3 | Hersteller : Vishay / Siliconix |
MOSFET Dual N Ch 20V Vds AEC-Q101 Qualified |
auf Bestellung 2940 Stücke: Lieferzeit 14-28 Tag (e) |
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SQJ200EP-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 20V 20A/60A PPAK SO Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 27W, 48W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 20A, 60A Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 10V Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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