SQJ403BEEP-T1_GE3

SQJ403BEEP-T1_GE3

SQJ403BEEP-T1_GE3

Hersteller: Vishay
Trans MOSFET P-CH 30V 30A Automotive 5-Pin(4+Tab) PowerPAK SO
sqj403beep.pdf
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Technische Details SQJ403BEEP-T1_GE3

Description: MOSFET P-CH 30V 30A POWERPAKSO-8, Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Base Part Number: SQJ403, Package / Case: PowerPAK® SO-8, Supplier Device Package: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 68W (Tc), Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA.

Preis SQJ403BEEP-T1_GE3 ab 0 EUR bis 0 EUR

SQJ403BEEP-T1_GE3
SQJ403BEEP-T1_GE3
Hersteller: Vishay Semiconductors
MOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified
VISH_S_A0002472627_1-2568159.pdf
auf Bestellung 9000 Stücke
Lieferzeit 14-28 Tag (e)
SQJ403BEEP-T1_GE3
SQJ403BEEP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 30A PPAK SO-8
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQJ403
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
sqj403beep.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ403BEEP-T1_GE3
SQJ403BEEP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 30A POWERPAKSO-8
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SQJ403
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
sqj403beep.pdf
auf Bestellung 2693 Stücke
Lieferzeit 21-28 Tag (e)
SQJ403BEEP-T1_GE3
SQJ403BEEP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 30A PPAK SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQJ403
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V
sqj403beep.pdf
auf Bestellung 1742 Stücke
Lieferzeit 21-28 Tag (e)