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SQJ412EP-T1_GE3

SQJ412EP-T1_GE3 Vishay Siliconix

sqj412ep.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10.3A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+2.51 EUR
6000+ 2.42 EUR
9000+ 2.34 EUR
Mindestbestellmenge: 3000
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Technische Details SQJ412EP-T1_GE3 Vishay Siliconix

Description: MOSFET N-CH 40V 32A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10.3A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 20 V, Qualification: AEC-Q101.

Weitere Produktangebote SQJ412EP-T1_GE3 nach Preis ab 2.64 EUR bis 5.69 EUR

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SQJ412EP-T1_GE3 SQJ412EP-T1_GE3 Hersteller : Vishay Siliconix sqj412ep.pdf Description: MOSFET N-CH 40V 32A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10.3A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 24798 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.59 EUR
10+ 4.63 EUR
100+ 3.68 EUR
500+ 3.12 EUR
1000+ 2.64 EUR
Mindestbestellmenge: 5
SQJ412EP-T1_GE3 SQJ412EP-T1_GE3 Hersteller : Vishay Semiconductors sqj412ep.pdf MOSFET 40V 32A 83W AEC-Q101 Qualified
auf Bestellung 5770 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
10+5.69 EUR
12+ 4.71 EUR
100+ 3.77 EUR
250+ 3.61 EUR
500+ 3.17 EUR
1000+ 2.73 EUR
Mindestbestellmenge: 10
SQJ412EP-T1-GE3 SQJ412EP-T1-GE3 Hersteller : Vishay Siliconix sqj412ep.pdf Description: MOSFET N-CH 40V 32A PPAK SO-8
auf Bestellung 1253 Stücke:
Lieferzeit 21-28 Tag (e)
SQJ412EP-T1-GE3 SQJ412EP-T1-GE3 Hersteller : Vishay Siliconix sqj412ep.pdf Description: MOSFET N-CH 40V 32A PPAK SO-8
auf Bestellung 1253 Stücke:
Lieferzeit 21-28 Tag (e)
SQJ412EP-T1-GE3 Hersteller : Vishay sqj412ep.pdf Trans MOSFET N-CH 40V 32A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R
Produkt ist nicht verfügbar
SQJ412EP-T1_GE3 SQJ412EP-T1_GE3 Hersteller : Vishay sqj412ep.pdf Trans MOSFET N-CH 40V 32A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R
Produkt ist nicht verfügbar
SQJ412EP-T1-GE3 SQJ412EP-T1-GE3 Hersteller : Vishay Siliconix sqj412ep.pdf Description: MOSFET N-CH 40V 32A PPAK SO-8
Produkt ist nicht verfügbar