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SQJ456EP-T2_GE3 Vishay


sqj456ep.pdf Hersteller: Vishay
Trans MOSFET N-CH 100V 32A Automotive AEC-Q101
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Technische Details SQJ456EP-T2_GE3 Vishay

Description: MOSFET N-CH 100V 32A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 9.3A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3342 pF @ 25 V, Qualification: AEC-Q101.

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SQJ456EP-T2_GE3 Hersteller : Vishay Siliconix SQJ456EP.pdf Description: MOSFET N-CH 100V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 9.3A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3342 pF @ 25 V
Qualification: AEC-Q101
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SQJ456EP-T2_GE3 SQJ456EP-T2_GE3 Hersteller : Vishay / Siliconix SQJ456EP.pdf MOSFET RECOMMENDED ALT 78-SQJA72EP-T1_GE3
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