SQJ469EP-T1_GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 2 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details SQJ469EP-T1_GE3
Description: MOSFET P-CH 80V 32A PPAK SO-8, Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 40V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Base Part Number: SQJ469, Package / Case: PowerPAK® SO-8, Supplier Device Package: PowerPAK® SO-8, Drain to Source Voltage (Vdss): 80V, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 100W (Tc), Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Part Status: Active, FET Type: P-Channel.
Preis SQJ469EP-T1_GE3 ab 0 EUR bis 0 EUR
 Hersteller: Vishay Siliconix Description: MOSFET P-CH 80V 32A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 40V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Base Part Number: SQJ469 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Drain to Source Voltage (Vdss): 80V Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 100W (Tc) Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Active FET Type: P-Channel 
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auf Bestellung 7882 Stücke Lieferzeit 21-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET P-CH 80V 32A PPAK SO-8 Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 40V Power Dissipation (Max): 100W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Base Part Number: SQJ469
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Hersteller: Vishay Siliconix Description: MOSFET P-CH 80V 32A PPAK SO-8 Packaging: Cut Tape (CT) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 40V Power Dissipation (Max): 100W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Base Part Number: SQJ469
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auf Bestellung 2188 Stücke Lieferzeit 21-28 Tag (e) |
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