SQJ469EP-T1_GE3

SQJ469EP-T1_GE3

SQJ469EP-T1_GE3

Hersteller: Vishay / Siliconix
MOSFET 80V 32A 100W AEC-Q101 Qualified
sqj469ep-1764616.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details SQJ469EP-T1_GE3

Description: MOSFET P-CH 80V 32A PPAK SO-8, Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 40V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Base Part Number: SQJ469, Package / Case: PowerPAK® SO-8, Supplier Device Package: PowerPAK® SO-8, Drain to Source Voltage (Vdss): 80V, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 100W (Tc), Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Part Status: Active, FET Type: P-Channel.

Preis SQJ469EP-T1_GE3 ab 0 EUR bis 0 EUR

SQJ469EP-T1_GE3
SQJ469EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 32A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Base Part Number: SQJ469
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 100W (Tc)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
sqj469ep.pdf
auf Bestellung 7882 Stücke
Lieferzeit 21-28 Tag (e)
SQJ469EP-T1_GE3
SQJ469EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 40V
Power Dissipation (Max): 100W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SQJ469
sqj469ep.pdf
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SQJ469EP-T1_GE3
SQJ469EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 32A PPAK SO-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 40V
Power Dissipation (Max): 100W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SQJ469
sqj469ep.pdf
auf Bestellung 2188 Stücke
Lieferzeit 21-28 Tag (e)