SQJ481EP-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 80V 16A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.95 EUR |
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Technische Details SQJ481EP-T1_GE3 Vishay Siliconix
Description: MOSFET P-CH 80V 16A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 10A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQJ481EP-T1_GE3 nach Preis ab 0.67 EUR bis 2.32 EUR
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SQJ481EP-T1_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -80V; -9.2A; 15W; PowerPAK® SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -80V Drain current: -9.2A Power dissipation: 15W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2993 Stücke: Lieferzeit 7-14 Tag (e) |
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SQJ481EP-T1_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -80V; -9.2A; 15W; PowerPAK® SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -80V Drain current: -9.2A Power dissipation: 15W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2993 Stücke: Lieferzeit 14-21 Tag (e) |
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SQJ481EP-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 80V 16A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 10A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3102 Stücke: Lieferzeit 21-28 Tag (e) |
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SQJ481EP-T1_GE3 | Hersteller : Vishay / Siliconix |
MOSFET -80V Vds; +/-20V Vgs PowerPAK SO-8L |
auf Bestellung 47707 Stücke: Lieferzeit 14-28 Tag (e) |
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SQJ481EP-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQJ481EP-T1_GE3 - Leistungs-MOSFET, p-Kanal, 80 V, 16 A, 0.0651 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 16A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 45W Anzahl der Pins: 8Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0651ohm |
auf Bestellung 20150 Stücke: Lieferzeit 14-21 Tag (e) |
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SQJ481EP-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQJ481EP-T1_GE3 - Leistungs-MOSFET, p-Kanal, 80 V, 16 A, 0.0651 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 16A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 45W Anzahl der Pins: 8Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0651ohm |
auf Bestellung 20150 Stücke: Lieferzeit 14-21 Tag (e) |
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SQJ481EP-T1_GE3 Produktcode: 191995 |
IC > IC andere |
Produkt ist nicht verfügbar
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SQJ481EP-T1_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 80V 16A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R |
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SQJ481EP-T1_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 80V 16A Automotive 5-Pin(4+Tab) PowerPAK SO T/R |
Produkt ist nicht verfügbar |