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SQJ488EP-T1_GE3

SQJ488EP-T1_GE3 Vishay

sqj488ep.pdf Hersteller: Vishay
Trans MOSFET N-CH 100V 42A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R
auf Bestellung 6073 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
132+1.2 EUR
Mindestbestellmenge: 132
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Technische Details SQJ488EP-T1_GE3 Vishay

Description: MOSFET N-CH 100V 42A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 979 pF @ 25 V.

Weitere Produktangebote SQJ488EP-T1_GE3 nach Preis ab 1.09 EUR bis 3.72 EUR

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SQJ488EP-T1_GE3 SQJ488EP-T1_GE3 Hersteller : Vishay sqj488ep.pdf Trans MOSFET N-CH 100V 42A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R
auf Bestellung 6073 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
61+2.62 EUR
68+ 2.26 EUR
70+ 2.11 EUR
74+ 1.93 EUR
100+ 1.65 EUR
250+ 1.53 EUR
500+ 1.27 EUR
1000+ 1.12 EUR
3000+ 1.09 EUR
Mindestbestellmenge: 61
SQJ488EP-T1_GE3 SQJ488EP-T1_GE3 Hersteller : Vishay / Siliconix sqj488ep.pdf MOSFET 100V 32A 27watt AEC-Q101 Qualified
auf Bestellung 20968 Stücke:
Lieferzeit 744-758 Tag (e)
Anzahl Preis ohne MwSt
14+3.72 EUR
16+ 3.35 EUR
100+ 2.7 EUR
500+ 2.19 EUR
1000+ 1.82 EUR
3000+ 1.7 EUR
Mindestbestellmenge: 14
SQJ488EP-T1_GE3 SQJ488EP-T1_GE3 Hersteller : Vishay sqj488ep.pdf Trans MOSFET N-CH 100V 42A Automotive 5-Pin(4+Tab) PowerPAK SO T/R
Produkt ist nicht verfügbar
SQJ488EP-T1_GE3 SQJ488EP-T1_GE3 Hersteller : Vishay Siliconix sqj488ep.pdf Description: MOSFET N-CH 100V 42A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 979 pF @ 25 V
Produkt ist nicht verfügbar
SQJ488EP-T1_GE3 SQJ488EP-T1_GE3 Hersteller : Vishay Siliconix sqj488ep.pdf Description: MOSFET N-CH 100V 42A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 979 pF @ 25 V
Produkt ist nicht verfügbar