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SQJ488EP-T2_BE3

SQJ488EP-T2_BE3 Vishay / Siliconix


sqj488ep-348524.pdf Hersteller: Vishay / Siliconix
MOSFET N-CHANNEL 100V(D-S)
auf Bestellung 18000 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
13+4.08 EUR
15+ 3.69 EUR
25+ 3.48 EUR
100+ 2.96 EUR
Mindestbestellmenge: 13
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Technische Details SQJ488EP-T2_BE3 Vishay / Siliconix

Description: MOSFET N-CH 100V 42A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 7.1A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 50 V.

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SQJ488EP-T2_BE3 SQJ488EP-T2_BE3 Hersteller : Vishay sqj488ep.pdf Trans MOSFET N-CH 100V 42A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R
Produkt ist nicht verfügbar
SQJ488EP-T2_BE3 SQJ488EP-T2_BE3 Hersteller : Vishay sqj488ep.pdf Trans MOSFET N-CH 100V 42A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R
Produkt ist nicht verfügbar
SQJ488EP-T2_BE3 SQJ488EP-T2_BE3 Hersteller : Vishay Siliconix Description: MOSFET N-CH 100V 42A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.1A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 50 V
Produkt ist nicht verfügbar
SQJ488EP-T2_BE3 SQJ488EP-T2_BE3 Hersteller : Vishay Siliconix Description: MOSFET N-CH 100V 42A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.1A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 50 V
Produkt ist nicht verfügbar