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SQJ844AEP-T1_GE3

SQJ844AEP-T1_GE3 Vishay / Siliconix


sqj844aep.pdf Hersteller: Vishay / Siliconix
MOSFET N-Channel 30V AEC-Q101 Qualified
auf Bestellung 26888 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
19+2.81 EUR
23+ 2.3 EUR
100+ 1.79 EUR
500+ 1.52 EUR
1000+ 1.24 EUR
3000+ 1.16 EUR
6000+ 1.1 EUR
Mindestbestellmenge: 19
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Technische Details SQJ844AEP-T1_GE3 Vishay / Siliconix

Description: MOSFET 2N-CH 30V 8A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 48W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V, Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Part Status: Active.

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SQJ844AEP-T1_GE3 SQJ844AEP-T1_GE3 Hersteller : Vishay sqj844aep.pdf Trans MOSFET N-CH 30V 8A Automotive 5-Pin(4+Tab) PowerPAK SO T/R
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SQJ844AEP-T1_GE3 SQJ844AEP-T1_GE3 Hersteller : Vishay Siliconix sqj844aep.pdf Description: MOSFET 2N-CH 30V 8A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Produkt ist nicht verfügbar
SQJ844AEP-T1_GE3 SQJ844AEP-T1_GE3 Hersteller : Vishay Siliconix sqj844aep.pdf Description: MOSFET 2N-CH 30V 8A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Produkt ist nicht verfügbar