SQJ858AEP-T1-GE3

SQJ858AEP-T1_GE3

Hersteller: VISHAY
Material: SQJ858AEP-T1-GE3 SMD N channel transistors
sqj858aep.pdf sqj858aep.pdf
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Technische Details SQJ858AEP-T1_GE3

Description: MOSFET N-CH 40V 58A PPAK SO-8, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V, Base Part Number: SQJ858, Manufacturer: Vishay Siliconix, Package / Case: PowerPAK® SO-8, Supplier Device Package: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 48W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 20V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Drain to Source Voltage (Vdss): 40V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR).

Preis SQJ858AEP-T1_GE3 ab 0 EUR bis 0 EUR

SQJ858AEP-T1_GE3
Hersteller: VISHAY
Material: SQJ858AEP-T1-GE3 SMD N channel transistors
sqj858aep.pdf sqj858aep.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ858AEP-T1_GE3
SQJ858AEP-T1_GE3
Hersteller: Vishay / Siliconix
MOSFET 40V 58A 48W AEC-Q101 Qualified
sqj858aep-1764507.pdf
auf Bestellung 9365 Stücke
Lieferzeit 14-28 Tag (e)
SQJ858AEP-T1-GE3
SQJ858AEP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 58A PPAK SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
sqj858aep.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ858AEP-T1_GE3
SQJ858AEP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 58A
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 20V
Power Dissipation (Max): 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
sqj858aep.pdf
auf Bestellung 16756 Stücke
Lieferzeit 21-28 Tag (e)
SQJ858AEP-T1_GE3
SQJ858AEP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 58A PPAK SO-8
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Base Part Number: SQJ858
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
sqj858aep.pdf
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
SQJ858AEP-T1_GE3
SQJ858AEP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 58A PPAK SO-8
Packaging: Cut Tape (CT)
Base Part Number: SQJ858
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
sqj858aep.pdf
auf Bestellung 10799 Stücke
Lieferzeit 21-28 Tag (e)