SQJ912BEP-T1_GE3 Vishay / Siliconix
auf Bestellung 16923 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
17+ | 3.15 EUR |
21+ | 2.59 EUR |
100+ | 2.05 EUR |
500+ | 1.77 EUR |
1000+ | 1.44 EUR |
3000+ | 1.35 EUR |
6000+ | 1.29 EUR |
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Technische Details SQJ912BEP-T1_GE3 Vishay / Siliconix
Description: MOSFET N-CH DUAL 40V PPSO-8L, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 48W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V, Rds On (Max) @ Id, Vgs: 11mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Part Status: Active.
Weitere Produktangebote SQJ912BEP-T1_GE3 nach Preis ab 1.67 EUR bis 3.67 EUR
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SQJ912BEP-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH DUAL 40V PPSO-8L Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 48W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Rds On (Max) @ Id, Vgs: 11mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Part Status: Active |
auf Bestellung 2598 Stücke: Lieferzeit 21-28 Tag (e) |
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SQJ912BEP-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQJ912BEP-T1_GE3 - Dual-MOSFET, n-Kanal, 40 V, 30 A, 0.009 ohm, PowerPAK SO, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40 Dauer-Drainstrom Id: 30 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 48 Bauform - Transistor: PowerPAK SO Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8 Produktpalette: TrenchFET Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.009 Betriebstemperatur, max.: 175 Schwellenspannung Vgs: 1.5 SVHC: No SVHC (19-Jan-2021) |
auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) |
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SQJ912BEP-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH DUAL 40V PPSO-8L Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 48W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Rds On (Max) @ Id, Vgs: 11mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Part Status: Active |
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